110 research outputs found

    Propagation characteristics of some novel coplanar waveguide transmission lines on GaAs at MM-wave frequencies

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    Three new Coplanar Waveguide (CPW) transmission lines, namely, Suspended CPW (SCPW), Stripline-like Suspended CPW (SSCPW) and Inverted CPW (ICPW), are proposed and also analyzed for their propagation characteristics. The substrate thickness, permittivity and dimensions of housing are assumed to be arbitrary. These structures have the following advantages over conventional CPW. Firstly, the ratio of guide wavelength to free space wavelength is closer to unity which results in larger dimensions and hence lower tolerances. Secondly, the effective dielectric constant is lower and hence the electromagnetic field energies are concentrated more in the air regions which should reduce attenuation. Thirdly, for a prescribed impedance level, the above structures have a wider slot width for identical strip width. Thus, low impedance lines can be achieved with reasonable slot dimensions. Fourthly, in an inverted CPW shunt mounting of active devices, such as Gunn and IMPATT diodes, between the strip and the metal trough is possible. This feature further enhances the attractiveness of the above structures. Lastly, an E-plane probe type transition from a rectangular waveguide to suspended CPW can also be easily realized. The computed results for GaAs at Ka-band illustrate the variation of normalized guide wavelength, effective dielectric constant and the characteristic impedance as a function of the: (1) frequency; (2) distance of separation between the trough side walls; (3) normalized strip and slot widths; and (4) normalized air gap

    Optoelectronic gain control of a microwave single stage GaAs MESFET amplifier

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    Gain control of a single stage GaAs MESFET amplifier is demonstrated by the use of optical illumination of photon energy greater than the GaAs bandgap. The optical illumination is supplied by a semiconductor laser diode and is coupled to the Schottky gate of the MESFET by an optical fiber. The increase in gain is observed to be as much as 5.15 dB when the MESFET is biased close to pinchoff, that is, V(sub gs) equals -1.5 V and with optical illumination of 1.5 mW. The computed maximum available gain (MAG) and current gain (bar h sub 21 bar) from the de-embedded s-parameters show that MAG is unaffected by optical illumination, however, bar h(sub 21)bar increases by more than 2 dB under optical illumination of 1.5 mW. The maximum frequency of oscillation (F sub max) and the unity current gain cut-off frequency (F sub t) obtained by extrapolating the MAG and bar h(sub 21)bar curves, respectively, show that the F(sub max) is insensitive to optical illumination but F(sub t) increases by 5 GHz

    A Millimeter-Wave Cavity-Backed Suspended Substrate Stripline Antenna

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    Future generation satellite communication systems in near-Earth orbit will operate at frequencies in the higher mm-wave frequency bands. These satellite systems require low-profile, high gain, light weight and low cost antennas for communications to and from Earth as well as for inter-satellite links (ISL). At higher mm-wave frequencies, the conductor loss of conventional microstrip line is high and consequently the feed network loss of patch antenna arrays is also high. The high loss lowers the array efficiency, and in addition lowers the G/T ratio in a receiving array. Recently a radial line slot antenna array has been demonstrated to have high gain and efficiency at 60 GHz. In this paper, the design, fabrication and characterization of a V-Band (50-75 GHz), cavity backed, circular aperture antenna with suspended substrate stripline (SSS) feed is presented

    Microelectromechanical Systems (MEMS) Actuator for Reconfigurable Patch Antenna Demonstrated

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    A microstrip patch antenna with two contact actuators along the radiating edges for frequency reconfiguration was demonstrated at K-band frequencies. The layout of the antenna is shown in the following figure. This antenna has the following advantages over conventional semiconductor varactor-diode-tuned patch antennas: 1. By eliminating the semiconductor diode and its nonlinear I-V characteristics, the antenna minimizes intermodulation signal distortion. This is particularly important in digital wireless systems, which are sensitive to intersymbol interference caused by intermodulation products. 2. Because the MEMS actuator is an electrostatic device, it does not draw any current during operation and, hence, requires a negligible amount of power for actuation. This is an important advantage for hand-held, battery-operated, portable wireless systems since the battery does not need to be charged frequently. 3. The MEMS actuator does not require any special epitaxial layers as in the case of diodes and, hence, is cost effective

    Link Analysis of High Throughput Spacecraft Communication Systems for Future Science Missions

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    NASA's plan to launch several spacecraft into low Earth Orbit (LEO) to support science missions in the next ten years and beyond requires down link throughput on the order of several terabits per day. The ability to handle such a large volume of data far exceeds the capabilities of current systems. This paper proposes two solutions, first, a high data rate link between the LEO spacecraft and ground via relay satellites in geostationary orbit (GEO). Second, a high data rate direct to ground link from LEO. Next, the paper presents results from computer simulations carried out for both types of links taking into consideration spacecraft transmitter frequency, EIRP, and waveform; elevation angle dependent path loss through Earths atmosphere, and ground station receiver GT

    Suspended-Patch Antenna With Inverted, EM-Coupled Feed

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    An improved suspended-patch antenna has been designed to operate at a frequency of about 23 GHz with linear polarization and to be one of four identical antennas in a rectangular array. The antenna includes a parasitic patch on top of a suspended dielectric superstrate, an active patch on top of a suspended dielectric substrate, a microstrip on the bottom of the dielectric substrate, and a ground plane. The microstrip, the ground plane, the airgap between them, and the dielectric substrate together constitute a transmission line that has an impedance of 50 Ohm and is electromagnetically (EM) coupled to the active patch. The parasitic patch is, in turn, excited by the active patch. The microstrip feed is characterized as inverted because the microstrip is on the bottom of the substrate, whereas microstrips are usually placed on the tops of dielectric substrate

    Measuring Radiation Patterns of Reconfigurable Patch Antennas on Wafers

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    An apparatus and technique have been devised for measuring the radiation pattern of a microwave patch antenna that is one of a number of identical units that have been fabricated in a planar array on a high-resistivity silicon wafer. The apparatus and technique are intended, more specifically, for application to such an antenna that includes a DC-controlled microelectromechanical system (MEMS) actuator for switching the antenna between two polarization states or between two resonance frequencies. Prior to the development of the present apparatus and technique, patch antennas on wafers were tested by techniques and equipment that are more suited to testing of conventional printed-circuit antennas. The techniques included sawing of the wafers to isolate individual antennas for testing. The equipment included custom-built test fixtures that included special signal launchers and transmission-line transitions. The present apparatus and technique eliminate the need for sawing wafers and for custom-built test fixtures, thereby making it possible to test antennas in less time and at less cost. Moreover, in a production setting, elimination of the premature sawing of wafers for testing reduces loss from breakage, thereby enhancing yield

    A flexible CPW package for a 30 GHz MMIC amplifier

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    A novel package, which consists of a carrier housing, has been developed for monolithic-millimeter wave Integrated Circuit amplifiers which operate at 30 giga-Hz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection and a feed-thru for biasing

    A new rectangular waveguide to coplanar waveguide transition

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    A new rectangular waveguide to coplanar waveguide (CPW) transition is described. The transition uses a ridge in one of the broad walls of the waveguide and a nonradiating slot in the opposite wall to split and rotate the electromagnetic fields of the rectangular waveguide TE10 mode into the CPW fields

    Optically controlled microwave devices and circuits: Emerging applications in space communications systems

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    Optical control of microwave devices and circuits by an optical fiber has the potential to simplify signal distribution networks in high frequency communications systems. The optical response of two terminal and three terminal (GaAs MESFET, HEMT, PBT) microwave devices are compared and several schemes for controlling such devices by modulated optical signals examined. Monolithic integration of optical and microwave functions on a single semiconductor substrate is considered to provide low power, low loss, and reliable digital and analog optical links for signal distribution
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